IXFX230N20T
230A 200V MOSFET
在庫：9,446
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFX230N20T
-
パッケージ/ケース : TO247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXFX230N20T データシート (PDF)
-
Series : IXFX230N20
概要 IXFX230N20T
Designed specifically for low-voltage high-current applications, IXFX230N20T is a versatile Trench Gate Power MOSFET that can handle the most demanding tasks while minimizing power consumption. With its unique architecture and exceptional thermal management capabilities, this device ensures reliable performance in even the most extreme operating conditions
主な特長
- Robust Construction
- Symmetric Switching Action
- Fault Isolation
- Overvoltage Protection
応用
- Advanced DC-DC converters
- Resilient uninterrupted power supplies
- Precision DC choppers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.0075 |
| Continuous Drain Current @ 25 ℃ (A) | 230 | Gate Charge (nC) | 358 |
| Input Capacitance, CISS (pF) | 24000 | Thermal resistance [junction-case] (K/W) | 0.09 |
| Configuration | Single | Package Type | TO-247 PLUS |
| Power Dissipation (W) | 1670 | Maximum Reverse Recovery (ns) | 200 |
| Sample Request | Yes | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
MRF6V2300NR1
Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R
NVTFS5124PLTAG
Product NVTFS5124PLTAG is a P-channel transistor designed for use in electronic circuits
SPP03N60C3
This product, SPP03N60C3, is a 3-pin (with 3+Tab) N-channel MOSFET capable of handling voltages up to 650V and currents of 3
IXFP110N15T2
150V, 110A MOSFET with TO-220 package and RoHS certification
NTMS7N03R2G
Lead-free N-channel MOSFET with a small signal, suitable for applications requiring a 4800mA, 30V rating
CM1000E3U-34NF
High Voltage IGBT Module rated at 1.7kV and 1kA
SI3493DDV-T1-GE3
P-Channel 20 V MOSFET
CZT5551
Trans GP BJT NPN 160V 0.6A 4-Pin(3+Tab) SOT-223 Tape and Box
FGH40N6S2D
Contact for details
AT-42035G
Silicon RF Bipolar Transistor AT-42035G