IPD50N04S4-08

Name: IPD50N04S4-08
Brand: INFINEON
Rating: 4.5 (10 reviews)

40V 50A High Current MOSFET

数量	単価(USD)	合計金額
1	$0.622	$0.62
10	$0.511	$5.11
30	$0.455	$13.65
100	$0.400	$40.00
500	$0.368	$184.00
1000	$0.350	$350.00

在庫：7,536

*価格は参考値です。

90日間のアフター保証
365日の品質保証
正規品保証
7*24時間サービス検疫

部品番号 : IPD50N04S4-08
パッケージ/ケース : TO-252-3
Brand : INFINEON
Components Classification : Single FETs, MOSFETs
日付シート : IPD50N04S4-08 データシート (PDF)

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その他のニーズ

概要 IPD50N04S4-08

As an N-channel silicon metal-oxide semiconductor FET, the IPD50N04S4-08 offers reliable and consistent performance in a variety of circuit configurations. Its TO-252 package ensures easy installation and heat dissipation, while the green plastic housing provides durability and protection against environmental factors

主な特長

Reduced energy stored in output capacitance (Eoss)
High body diode ruggedness
Reduced reverse recovery charge (Qrr)
Reduced gate charge (Qg)
Overall Features
BENEFITS
Reduction of switching losses, improvement of light load efficiency
Higher reliability under critical operating conditions
Lower possibility of hard commutation in resonant topologies
Improvement in light load efficiency
Lower gate drive capability required
Easy control of switching behavior
Outstanding reliability with proven CoolMOSTM quality

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid	IPD50N04S4-08	Pbfree Code	Yes
Rohs Code	Yes	Part Life Cycle Code	Active
Ihs Manufacturer	INFINEON TECHNOLOGIES AG	Part Package Code	TO-252
Package Description	SMALL OUTLINE, R-PSSO-G2	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Samacsys Manufacturer	Infineon
Avalanche Energy Rating (Eas)	55 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (Abs) (ID)	50 A	Drain Current-Max (ID)	50 A
Drain-source On Resistance-Max	0.0079 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Package Body Material	PLASTIC/EPOXY	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	46 W
Pulsed Drain Current-Max (IDM)	200 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Element Material	SILICON	Manufacturer	Infineon
Product Category	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	TO-252-3	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	50 A	Rds On - Drain-Source Resistance	7.2 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	22.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	46 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	OptiMOS	Series	OptiMOS-T2
Brand	Infineon Technologies	Fall Time	6 ns
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	7 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	5 ns
Typical Turn-On Delay Time	5 ns	Width	6.22 mm
Part # Aliases	IPD5N4S48XT SP000711450 IPD50N04S408ATMA1	Unit Weight	0.011640 oz

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QAと返品ポリシー

部品の品質保証: 365 日

返品・返金：90日以内

返品・交換：90日以内
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