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IPD50P04P413ATMA1

Automotive-grade P-Channel MOSFET with 40V Voltage Rating and 50A Current Capacity in DPAK Package

在庫：8,195

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

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概要 IPD50P04P413ATMA1

Dive into the realm of efficient power delivery with the IPD50P04P413ATMA1 Power-MOSFET transistor by Infineon Technologies. Designed to meet the demands of power management applications, this transistor offers exceptional performance and reliability. Its high drain-source voltage rating of 40V and continuous drain current rating of 50A make it a suitable choice for applications requiring robust power handling capabilities. The low on-state resistance of 4.2mOhm ensures minimal power losses, enhancing overall energy efficiency. Operating seamlessly with standard logic levels due to its gate threshold voltage of -2V, this transistor is a versatile option for various electronic devices. With a durable TO-252 package and RoHS compliance, the IPD50P04P413ATMA1 is a sustainable and dependable solution for power management needs

主な特長

  • N-channel power MOSFET
  • High-voltage switching device
  • Lateral DMOS transistor

応用

  • Sensor applications
  • Renewable energy applications
  • Telecommunications applications

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

functionalPacking TAPE & REEL packageNameMarketing DPAK
halogenFree yes customerInfo STANDARD
fgr F44 productClassification COM
productStatusInfo not for new design hfgr F
packageName PG-TO252-3 pbFree yes
moistureProtPack NON DRY orderingCode SP000840204
fourBlockPackageName PG-TO252-3-313 rohsCompliant yes
opn IPD50P04P413ATMA1 completelyPbFree no
sapMatnrSali SP000840204

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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