IPDD60R080G7XTMA1
Premium , A, mOhms power semiconductor for high-reliability design
在庫:6,114
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部品番号 : IPDD60R080G7XTMA1
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パッケージ/ケース : HDSOP-10
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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日付シート : IPDD60R080G7XTMA1 データシート (PDF)
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Series : IPDD60R080G7
概要 IPDD60R080G7XTMA1
IPDD60R080G7XTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 29A 10-Pin HDSOP EP T/R - Arrow.com
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | HDSOP-10 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 29 A |
Rds On - Drain-Source Resistance | 80 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 42 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 174 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 3.5 ns | Product Type | MOSFET |
Rise Time | 5 ns | Factory Pack Quantity | 1700 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 61 ns |
Typical Turn-On Delay Time | 19 ns | Part # Aliases | IPDD60R080G7 SP001632824 |
Unit Weight | 0.026877 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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