IPG16N10S461ATMA1
Automotive-grade N-channel MOSFET capable of handling up to 100 volts and 16 amps of current, packaged in an 8-pin TDSON EP
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.690 | $0.69 |
10 | $0.575 | $5.75 |
30 | $0.517 | $15.51 |
100 | $0.459 | $45.90 |
500 | $0.425 | $212.50 |
1000 | $0.407 | $407.00 |
在庫:8,844
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IPG16N10S461ATMA1
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パッケージ/ケース : TDSON-8
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Brand : INFINEON
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Components Classification : FET, MOSFET Arrays
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日付シート : IPG16N10S461ATMA1 データシート (PDF)
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Series : IPG16N10S4-61
概要 IPG16N10S461ATMA1
The IPG16N10S461ATMA1 MOSFET, manufactured by Infineon Technologies, is a robust and efficient semiconductor device designed for high power handling in various applications. With a drain-source voltage of 100V and a continuous drain current of 16A, this MOSFET is well-suited for applications that require high frequency switching and high power efficiency. Its low on-resistance of 0.046 ohms and gate threshold voltage of 2V ensure efficient power management and minimal power loss during operation. The TO-220 package housing provides excellent thermal performance and easy mounting on circuit boards, with an additional heat sink tab for enhanced cooling if necessary. Whether used in power supply, motor control, or lighting applications, the IPG16N10S461ATMA1 MOSFET offers reliability and high efficiency, making it an ideal choice for demanding circuit designs
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TDSON-8 |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 16 A |
Rds On - Drain-Source Resistance | 53 mOhms, 53 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 29 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Series | IPG16N10 |
Brand | Infineon Technologies | Configuration | Dual |
Fall Time | 5 ns, 5 ns | Height | 1.27 mm |
Length | 5.9 mm | Product Type | MOSFET |
Rise Time | 1 ns, 1 ns | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 5 ns, 5 ns | Typical Turn-On Delay Time | 3 ns, 3 ns |
Width | 5.15 mm | Part # Aliases | IPG16N10S4-61 SP000892972 |
Unit Weight | 0.003383 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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