IPLK70R2K0P7ATMA1
Efficiently control high-voltage loads with this robust power MOSFE
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.686 | $0.69 |
200 | $0.266 | $53.20 |
500 | $0.257 | $128.50 |
1000 | $0.252 | $252.00 |
在庫:6,896
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPLK70R2K0P7ATMA1
-
パッケージ/ケース : PG-TDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPLK70R2K0P7ATMA1 データシート (PDF)
-
Series : IPLK70R2K0P7
概要 IPLK70R2K0P7ATMA1
N-Channel 700 V Surface Mount PG-TDSON-8
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TDFN-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 700 V | Channel Mode | Enhancement |
Brand | Infineon Technologies | Product Type | MOSFET |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Part # Aliases | IPLK70R2K0P7 SP001791362 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IPB072N15N3GATMA1](/img/package/to263.jpg)
IPB072N15N3GATMA1
Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R
![IPC50N04S5L5R5ATMA1](/img/package/son8.jpg)
IPC50N04S5L5R5ATMA1
OptiMOS™ 5 QFN 5X6 40V
![IPC50N04S55R8ATMA1](/img/package/son8.jpg)
IPC50N04S55R8ATMA1
Automotive-grade N-Channel MOSFET with 40V Voltage Rating and 50A Current Capacity
![IPB65R110CFDA](/img/package/to263.jpg)
IPB65R110CFDA
Maximum power dissipation of 277.8W at 4.5V and 12.7A
![IPB65R660CFDA](/img/package/to263.jpg)
IPB65R660CFDA
Integrate the IPB65R660CFDA seamlessly into your circuitry for optimized performance
![IPD30N10S3L34ATMA1](/img/package/to-3.jpg)
IPD30N10S3L34ATMA1
Automotive grade
![IPD35N10S3L26ATMA1](/img/package/to-3.jpg)
IPD35N10S3L26ATMA1
Automotive-grade N-channel MOSFET featuring a 100V voltage rating, 35A current capacity, and DPAK package with 3 pins
![IPD90P04P405ATMA1](/img/package/to252.jpg)
IPD90P04P405ATMA1
OptiMOS-P2 DPAK-2 MOSFET capable of handling -90A current at -40V voltage
![IPD90P04P4L04ATMA1](/img/package/dpak.jpg)
IPD90P04P4L04ATMA1
Description: P-Ch MOSFET with a rating of -40V and a current capacity of -90A, packaged in DPAK-2 OptiMOS-P2
![IPP60R080P7XKSA1](/img/package/to220.jpg)
IPP60R080P7XKSA1
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
![MRF6S20010NR1](/img/package/to3.jpg)
MRF6S20010NR1
) Packaged in TO-270 with 3 pins for easy installation
![IXTK32P60P](/img/package/to264.jpg)
IXTK32P60P
Field-Effect Transistor for power applications
![MRF1550FNT1](/img/package/to3.jpg)
MRF1550FNT1
RF MOSFET Transistors
![ZVN4106FTA](/img/package/sot23.jpg)
ZVN4106FTA
Metal-Oxide-Semiconductor Field-Effect Transistor N-Channel 60V
![APT75GN120LG](/img/package/to264.jpg)
APT75GN120LG
APT75GN120LG IGBT Transistors employ Fieldstop design for enhanced performance at low frequencies
![ZXTN620MATA](/img/package/dfn20.jpg)
ZXTN620MATA
High efficiency NPN transistor with low saturation voltage for reduced power dissipation
![BULD742CT4](/img/package/dpak.jpg)
BULD742CT4
Bipolar transistors for high voltage fast switching applications NPN power transistor
![SI1926DL-T1-E3](/img/package/sot363.jpg)
SI1926DL-T1-E3
N Channel 60V 370mA 1.4 ohm
![SIR836DP-T1-GE3](/img/package/power33.jpg)
SIR836DP-T1-GE3
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
![STW30NM60ND](/img/package/to247.jpg)
STW30NM60ND
600 Volt Transistor