SI1926DL-T1-E3
N Channel 60V 370mA 1.4 ohm
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部品番号 : SI1926DL-T1-E3
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パッケージ/ケース : SOT-363-6
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Brand : Vishay
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Components Classification : FET, MOSFET Arrays
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日付シート : SI1926DL-T1-E3 データシート (PDF)
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Series : SI1926DL
概要 SI1926DL-T1-E3
Mosfet Array 60V 370mA 510mW Surface Mount SC-70-6
主な特長
- Rapid charge-discharge cycles
- Improved power conversion efficiency
- Suitable for high-frequency AC applications
応用
- For all your power needs
- Efficient energy solutions
- Versatile and reliable
- Perfect for any application
- High-performance technology
- Quality you can trust
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 | Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 370 mA | Rds On - Drain-Source Resistance | 1.4 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 900 pC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 510 mW |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI1 | Brand | Vishay Semiconductors |
| Configuration | Dual | Fall Time | 14 ns |
| Forward Transconductance - Min | 159 mS | Height | 1 mm |
| Length | 2.1 mm | Product Type | MOSFET |
| Rise Time | 12 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 13 ns | Typical Turn-On Delay Time | 6.5 ns |
| Width | 1.25 mm | Part # Aliases | SI1926DL-T1-BE3 SI1926DL-E3 |
| Unit Weight | 0.000265 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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