IPN60R1K5CE
Maximum junction temperature voltage: 650V
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.451 | $0.45 |
| 10 | $0.367 | $3.67 |
| 30 | $0.332 | $9.96 |
| 100 | $0.286 | $28.60 |
| 500 | $0.254 | $127.00 |
| 1000 | $0.244 | $244.00 |
在庫：7,478
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IPN60R1K5CE
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パッケージ/ケース : SOT-223
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ブランド : INFINEON
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IPN60R1K5CE データシート (PDF)
概要 IPN60R1K5CE
Elevate your power management systems with the IPN60R1K5CE power MOSFET transistor. Boasting a robust 600V N-channel configuration, this device offers a substantial maximum drain current of 60A coupled with an ultra-low on-resistance of just 1.5mΩ. Ideal for applications that necessitate rapid switching, such as power supplies and motor control mechanisms, this transistor delivers on both efficiency and reliability. Its TO-220 package not only ensures superior thermal performance but also simplifies the mounting process for seamless integration into your projects
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| IDpuls max | 8.4 A | Mounting | SMT |
| Ptot max | 5.0 W | Polarity | N |
| RthJA max | 75.0 K/W | VDS max | 600.0 V |
| ID max | 5.0 A | RDS (on) max | 1500.0 mΩ |
| Special Features | price/performance | Package | SOT-223 |
| VGS(th) max | 3.5 V | VGS(th) min | 2.5 V |
| Operating Temperature max | 150.0 °C | Operating Temperature min | -40.0 °C |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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