IPW65R115CFD7AXKSA1
N-Channel MOSFET Transistor
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $5.917 | $5.92 |
200 | $2.291 | $458.20 |
500 | $2.210 | $1,105.00 |
1000 | $2.170 | $2,170.00 |
在庫:9,809
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPW65R115CFD7AXKSA1
-
パッケージ/ケース : TO-247-3
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPW65R115CFD7AXKSA1 データシート (PDF)
-
Series : IPW65R115CFD7A
概要 IPW65R115CFD7AXKSA1
N-Channel 650 V 21A (Tc) 114W (Tc) Through Hole PG-TO247-3-41
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 24 A |
Rds On - Drain-Source Resistance | 115 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4.5 V | Qg - Gate Charge | 41 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 114 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | CoolMOS |
Series | CoolMOS CFD7A | Brand | Infineon Technologies |
Product Type | MOSFET | Factory Pack Quantity | 240 |
Subcategory | MOSFETs | Part # Aliases | IPW65R115CFD7A SP003793162 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IPB072N15N3GATMA1](/img/package/to263.jpg)
IPB072N15N3GATMA1
Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R
![IPC50N04S5L5R5ATMA1](/img/package/son8.jpg)
IPC50N04S5L5R5ATMA1
OptiMOS™ 5 QFN 5X6 40V
![IPC50N04S55R8ATMA1](/img/package/son8.jpg)
IPC50N04S55R8ATMA1
Automotive-grade N-Channel MOSFET with 40V Voltage Rating and 50A Current Capacity
![IPB65R110CFDA](/img/package/to263.jpg)
IPB65R110CFDA
Maximum power dissipation of 277.8W at 4.5V and 12.7A
![IPB65R660CFDA](/img/package/to263.jpg)
IPB65R660CFDA
Integrate the IPB65R660CFDA seamlessly into your circuitry for optimized performance
![IPD30N10S3L34ATMA1](/img/package/to-3.jpg)
IPD30N10S3L34ATMA1
Automotive grade
![IPD35N10S3L26ATMA1](/img/package/to-3.jpg)
IPD35N10S3L26ATMA1
Automotive-grade N-channel MOSFET featuring a 100V voltage rating, 35A current capacity, and DPAK package with 3 pins
![IPD90P04P405ATMA1](/img/package/to252.jpg)
IPD90P04P405ATMA1
OptiMOS-P2 DPAK-2 MOSFET capable of handling -90A current at -40V voltage
![IPD90P04P4L04ATMA1](/img/package/dpak.jpg)
IPD90P04P4L04ATMA1
Description: P-Ch MOSFET with a rating of -40V and a current capacity of -90A, packaged in DPAK-2 OptiMOS-P2
![IPP60R080P7XKSA1](/img/package/to220.jpg)
IPP60R080P7XKSA1
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
![IRF840ASPBF](/img/package/d2pak3.jpg)
IRF840ASPBF
Featuring a voltage tolerance of 500V and a current capacity of 8A, the IRF840ASPBF MOSFET exhibits an on-resistance of 850mΩ at 4
![SMA4033](/img/package/sip12.jpg)
SMA4033
ROHS SIP-12 Darlington Transistors
![ZXMP6A13GTA](/img/package/sot223.jpg)
ZXMP6A13GTA
SOT-223-3 package configuration
![BUK9624-55A](/img/package/d2pak3.jpg)
BUK9624-55A
The BUK9624-55A is a Power Semiconductor Device
![FMMT459TA](/img/package/sot23.jpg)
FMMT459TA
The FMMT459TA transistor is an NPN type with a maximum voltage rating of 450V and a power dissipation capability of 625mW
![IXFA180N10T2](/img/package/to263.jpg)
IXFA180N10T2
IXFA180N10T2 specifications
![DMP4015SPS-13](/img/package/power33.jpg)
DMP4015SPS-13
Mosfet Powerdi 5060
![BSM100GAL120DLCK](/img/package/module.jpg)
BSM100GAL120DLCK
Insulated Gate Bipolar Transistor with a maximum collector current of 205A and a breakdown voltage of 1200V
![KSC3503ESTU](/img/package/to126.jpg)
KSC3503ESTU
TRANS NPN 300V 0.1A TO126-3
![SI5475DDC-T1-GE3](/img/package/smd.jpg)
SI5475DDC-T1-GE3
Halogen free and RoHS compliant