IRF634PBF
Power MOSFET, N-Type, 250V, HEXFET
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.760 | $0.76 |
10 | $0.625 | $6.25 |
50 | $0.559 | $27.95 |
100 | $0.493 | $49.30 |
500 | $0.452 | $226.00 |
1000 | $0.431 | $431.00 |
在庫:8,038
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IRF634PBF
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パッケージ/ケース : TO-220AB
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : IRF634PBF データシート (PDF)
概要 IRF634PBF
N-Channel 250 V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB
主な特長
- Improved thermal management
- Enhanced noise performance
- Robust design for reliability
- Easy circuit integration
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Mfr | Vishay Siliconix |
Series | - | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450mOhm @ 5.1A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V | FET Feature | - |
Power Dissipation (Max) | 74W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 | Base Product Number | IRF634 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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