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IRFB11N50APBF

Voltage-regulating MOSFET with planar configuration and minimum rating of 100 volts

数量 単価(USD) 合計金額
1 $1.429 $1.43
10 $1.226 $12.26
30 $1.099 $32.97
100 $0.971 $97.10
500 $0.912 $456.00
1000 $0.887 $887.00

在庫：8,343

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
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迅速な見積もり

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概要 IRFB11N50APBF

As part of the HEXFET series, the IRFB11N50APBF MOSFET boasts a solid reputation for reliability and performance in power applications. Its high voltage rating, low on-state resistance, and fast switching speed make it a standout choice for demanding industrial and automotive applications. The TO-220AB package ensures easy integration and robust thermal performance, while the MOSFET's features like low gate charge and high current handling capability demonstrate its efficiency and suitability for high-frequency switching tasks. In conclusion, the IRFB11N50APBF MOSFET is a versatile and dependable component that excels in power-critical environments

主な特長

  • The IRFB11N50APBF is a reliable and efficient choice for power supplies and motor control
  • Its low on-resistance reduces energy loss and boosts overall system performance

応用

["Switch Mode Power Supply (SMPS) ", "Uninterruptible Power Supply ", "High Speed Power Switching"]

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer IR Product Category FETs - Single
Packaging Tube Unit-Weight TO-220-3
Mounting-Style Single Package-Case 1 N-Channel
Technology 170 W Number-of-Channels 28 ns
Configuration 35 ns Transistor-Type 30 V
Pd-Power-Dissipation 11 A Maximum Operating Temperature N-Channel
Operating temperature range Enhancement RoHS Details
Mounting Style Through Hole Package / Case TO-220AB-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 11 A
Rds On - Drain-Source Resistance 520 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 52 nC
Minimum Operating Temperature - 55 C Pd - Power Dissipation 170 W
Channel Mode Enhancement Series IRFB
Brand Vishay Semiconductors Fall Time 28 ns
Product Type MOSFET Rise Time 35 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 14 ns Part # Aliases IRFB11N50APBF-BE3
Unit Weight 0.068784 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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