IRF820PBF
-pin TO-220AB IRF820PBF MOSFET with 500V 2.5A capabilities
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.826 | $0.83 |
| 10 | $0.676 | $6.76 |
| 50 | $0.602 | $30.10 |
| 100 | $0.526 | $52.60 |
| 500 | $0.482 | $241.00 |
| 1000 | $0.460 | $460.00 |
在庫：8,019
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IRF820PBF
-
パッケージ/ケース : TO220-3
-
ブランド : Siliconix
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : IRF820PBF データシート (PDF)
概要 IRF820PBF
N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
主な特長
- Fast rise and fall times
- High reliability ensured
- Simplified thermal management
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 2.5 A |
| Rds On - Drain-Source Resistance | 3 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 24 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 50 W | Channel Mode | Enhancement |
| Series | IRF | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 16 ns |
| Height | 15.49 mm | Length | 10.41 mm |
| Product Type | MOSFET | Rise Time | 8.6 ns |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 8 ns | Width | 4.7 mm |
| Part # Aliases | IRF820PBF-BE3 | Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IRF3415PBF
43 amp current rating
IRF7324TRPBF
Silicon P-Type MOSFET with a Maximum Voltage of 20V and Current Handling Capability of 9A
IRF7832TRPBF
8-pin surface-mount N-channel MOSFET with a 30-volt, 20-amp rating
IRF7831TRPBF
30V N Channel MOSFET with 21A current rating and 3.6mΩ resistance at 10V
IRFB3307ZPBF
Tube Packaging for IRFB3307ZPBF N-Channel Silicon MOSFET with 3 Pins and a Tab
IRFB4310ZPBF
100 V HEXFET Infineon IRFB4310ZPBF N-channel MOSFET, 127 A, 3-Pin TO-220AB
IRFHM8326TRPBF
Single N-Channel 30 V 4.7 mOhm 39 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
IRFP054NPBF
MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC
IRFP4227PBF
Part number IRFP4227PBF
IRFR7540TRPBF
Power Field-Effect Transistor
IRFD110PBF
N-channel Metal Oxide Semiconductor Field-Effect Transistor, 100V, 1A, High Voltage
NTD4906NT4G
DPAK MOSFET NFET capable of handling 30V and 54A with a low resistance of 5.5 mOhm
VP0300B
P-CHANNEL Silicon Power MOSFET, rated for 1.25 Amperes and 30 Volts, with a nominal resistance of 2.5 ohms, housed in a TO-205AD package
STA408A
SIP Packaged Trans Darlington PNP: 120V, 4A, 4000mW, 10 Pins
IRLH5030TRPBF
MOSFET transistor with N-channel, 100V capacity, 9mOhms resistance, and 44nC gate charge
RV1C002UNT2CL
DFN-3(0.8x0.6) MOSFETs with ROHS certification
SPP11N60C3XKSA1
80mΩ on-resistance at 7A and 10V
SISS27ADN-T1-GE3
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
NPT2010
NPT2010 MOSFETs with 95W power rating
RFD15P05
P-Ch Power MOSFET TO-251AA