SISS27ADN-T1-GE3
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
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部品番号 : SISS27ADN-T1-GE3
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パッケージ/ケース : PowerPAK1212-8
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ブランド : Siliconix
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : SISS27ADN-T1-GE3 データシート (PDF)
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Series : SISS27ADN
概要 SISS27ADN-T1-GE3
P-Channel 30 V 50A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
主な特長
- Fast switching speed
- High reliability
- SMT compatible
応用
- Power management in portable devices.
- DC-DC converters and voltage regulators.
- Motor control and drive circuits.
- Load switching in various electronic systems.
- Power supplies and inverters.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | PowerPAK-1212-8 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 50 A |
| Rds On - Drain-Source Resistance | 4.2 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V | Qg - Gate Charge | 117 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 57 W | Channel Mode | Enhancement |
| Tradename | TrenchFET, PowerPAK | Series | SIS |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 22 ns | Forward Transconductance - Min | 57 S |
| Height | 1.04 mm | Length | 3.3 mm |
| Product Type | MOSFET | Rise Time | 35 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time | 48 ns | Width | 3.3 mm |
| Unit Weight | 0.032487 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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