IRF9530NSPBF
100V 14A Transistor
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部品番号 : IRF9530NSPBF
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パッケージ/ケース : TO-252-3
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Brand : Infineon
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Components Classification : Single FETs, MOSFETs
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日付シート : IRF9530NSPBF データシート (PDF)
概要 IRF9530NSPBF
The IRF9530NSPBF is a Power MOSFET transistor designed for high performance in power applications. It has a P-Channel design with a drain-source voltage of -100V and a continuous drain current rating of -14A. The IRF9530NSPBF features a low on-resistance of 0.18 ohms, which helps to minimize power losses and improve efficiency in circuit designs.This transistor is housed in a TO-263 package, which allows for easy mounting on a printed circuit board. It also features a high power dissipation rating of 75W, making it suitable for a wide range of power applications where high performance and reliability are essential.The IRF9530NSPBF is designed to provide excellent thermal performance, with a junction-to-ambient thermal resistance of 62°C/W. This helps to ensure that the transistor maintains a stable temperature during operation, preventing overheating and potential damage to the component.
主な特長
- Silicon carbide substrate technology used
- Operating temperature range compatible
- Low thermal resistance package for efficient heat dissipation
- High temperature soldering compatibility ensured
- Rapid switching speed capability for reliable operation
- Voltage regulation and control feature available
応用
- Automotive systems
- Industrial control systems
- Servo drives
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 14 A | Rds On - Drain-Source Resistance | 200 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 38.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 3.8 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 46 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 58 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 15 ns | Width | 6.22 mm |
Part # Aliases | SP001555856 | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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