RSD200N05TL
Type: Power MOSFET with N-channel drive
在庫：5,716
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : RSD200N05TL
-
パッケージ/ケース : DPAK-3
-
ブランド : Rohm Semiconductor
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : RSD200N05TL データシート (PDF)
-
Series : RSD200N05
概要 RSD200N05TL
The RSD200N05TL power MOSFET is a versatile component, capable of handling up to 200A of current. Its low on-resistance of 0.005 ohms ensures efficient power transfer in demanding applications such as motor control and power supplies. Additionally, its suitability for automotive systems makes it a reliable choice for a wide range of industries
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | REACH | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 45 V |
| Id - Continuous Drain Current | 20 A | Rds On - Drain-Source Resistance | 20 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 12 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 20 W |
| Channel Mode | Enhancement | Series | RSD200N05 |
| Brand | ROHM Semiconductor | Configuration | Single |
| Fall Time | 20 ns | Product Type | MOSFET |
| Rise Time | 20 ns | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 50 ns | Typical Turn-On Delay Time | 10 ns |
| Part # Aliases | RSD200N05 | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
RSQ045N03TR
High-Performance N-Channel MosFet with Surface Mount Design, 56 mOhm Resistance, and 4 V Drive Voltage
RSU002P03T106
RSU002P03T106 is a P-channel MOSFET featuring a maximum voltage rating of 30V
RSH070P05GZETB
P-Channel Silicon FET
RSD080N06TL
ROHM - RSD080N06TL - MOSFET, N-CH, 60V, 8A, TO-252
RSD131P10TL
With a designation of RSD131P10TL
RSD150N06TL
The RSD150N06TL is a silicon-based Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with a maximum drain current of 15A
RSD160P05TL
Product RSD160P05TL is a MOSFET with a P-channel, capable of handling a voltage of -45V and current of -16A in a TO-252 package
RSE002N06TL
Silicon MOSFET designed for surface mount applications, featuring 150 mW power dissipation
RSF015N06TL
Ready to ship RoHS compliant product
RSF010P05TL
SOT-323-3 MOSFETs with ROHS compliance
IRFB4610PBF
TO-220-3 Power Mosfet with 100 V Voltage Rating
CM100TX-24S
IGBT Modules: This product, designated as CM100TX-24S, belongs to the S-Series NX Type 6-PAC category
BSM100GB120DLC
BSM100GB120DLC is a dual IGBT module with a voltage rating of 1200V and a current rating of 100A
NTTFS5C673NLTAG
Power Field-Effect Transistor, 60V, 0.013ohm, 1-Element
IXFT50N60P3
N-Channel MOSFET with 600V voltage rating and 50A current rating in TO-268 package
SIA427ADJ-T1-GE3
VISHAY - SIA427ADJ-T1-GE3 - MOSFET Transistor, P Channel, -12 A, -8 V, 0.013 ohm, -4.5 V, -800 mV
2N6213
2N6213 is categorized under Bipolar Transistors, specifically Power BJT, indicating its suitability for high-power circuitry
NSS20200LT1G
Product description for NSS20200LT1G: Bipolar Transistors - BJT 20V PNP featuring low VCE(SAT) and XTR functionality
BC857BW,115
Trans GP BJT PNP 45V 0.1A 200mW 3-Pin SC-70 T/R
DMN30H4D0L-7
300V 250mA 310mW N Channel SOT-23 MOSFETs