IRF9620PBF
P-Channel Silicon Metal-oxide Semiconductor FET with a resistance of 1.5 ohms
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.917 | $0.92 |
10 | $0.768 | $7.68 |
50 | $0.649 | $32.45 |
100 | $0.577 | $57.70 |
500 | $0.531 | $265.50 |
1000 | $0.510 | $510.00 |
在庫:5,170
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IRF9620PBF
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パッケージ/ケース : TO-220AB
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : IRF9620PBF データシート (PDF)
概要 IRF9620PBF
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:-3.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:14A; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
主な特長
- This P-Channel MOSFET features high speed and low on-resistance.
- Suitable for DC-DC converters, power supplies, and motor control applications.
応用
- Industrial
- Power Management
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC |
Part Package Code | TO-220AB | Package Description | FLANGE MOUNT, R-PSFM-T3 |
Pin Count | 3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 17 Weeks, 3 Days |
Samacsys Manufacturer | Vishay | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (Abs) (ID) | 3.5 A | Drain Current-Max (ID) | 3.5 A |
Drain-source On Resistance-Max | 1.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 40 W | Pulsed Drain Current-Max (IDM) | 14 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | Matte Tin (Sn) | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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