IRFB9N65APBF
N-channel MOSFET,IRFB9N65A 8.5A 650V
在庫：4,886
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部品番号 : IRFB9N65APBF
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パッケージ/ケース : TO-220AB
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : IRFB9N65APBF データシート (PDF)
概要 IRFB9N65APBF
Whether used in industrial, automotive, or consumer electronics applications, the IRFB9N65APBF offers a versatile solution for power control. Its single-element design simplifies circuit integration, while the N-channel configuration allows for efficient switching and control of power flow. With a wide operating temperature range and robust construction, this transistor is built to perform reliably in challenging environments
主な特長
- Rugged design withstands harsh environmental conditions
- Improved thermal resistance reduces temperature rise
- Suitable for high-power DC-DC converters and motor drives
- Fully characterized performance ensures accurate design
- Compliance with major industry standards guaranteed
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC |
| Part Package Code | TO-220AB | Package Description | FLANGE MOUNT, R-PSFM-T3 |
| Pin Count | 3 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | Vishay |
| Avalanche Energy Rating (Eas) | 325 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
| Drain Current-Max (Abs) (ID) | 8.5 A | Drain Current-Max (ID) | 8.5 A |
| Drain-source On Resistance-Max | 0.93 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 167 W | Pulsed Drain Current-Max (IDM) | 21 A |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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