IRFBE20PBF
Product Description: 800V 1.8A N Channel MOSFET with 6.5Ω resistance
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.998 | $1.00 |
| 10 | $0.853 | $8.53 |
| 50 | $0.739 | $36.95 |
| 100 | $0.648 | $64.80 |
| 500 | $0.607 | $303.50 |
| 1000 | $0.590 | $590.00 |
在庫：5,930
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IRFBE20PBF
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パッケージ/ケース : TO-220AB
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : IRFBE20PBF データシート (PDF)
概要 IRFBE20PBF
N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
主な特長
- Rapid switching time
- High current handling
- Compact design
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Mfr | Vishay Siliconix |
| Series | - | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 1.1A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V | FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 | Base Product Number | IRFBE20 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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