IRFS4010-7PPBF
Advanced D2PAK package with high current handling capabilities
在庫:6,556
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部品番号 : IRFS4010-7PPBF
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パッケージ/ケース : TO-263-7
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ブランド : Infineon
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRFS4010-7PPBF データシート (PDF)
概要 IRFS4010-7PPBF
The IRFS4010-7PPBF power MOSFET, part of Infineon Technologies' portfolio, is engineered for high-performance applications, featuring a robust voltage rating of 100V. This makes it a versatile and reliable choice for various industrial and automotive applications where high voltage tolerance is a key requirement. With a low on-state resistance of typically 7.7 milliohms at a gate voltage of 10 volts, the IRFS4010-7PPBF offers efficient power handling capabilities, mitigating power loss and heat generation. Its advanced MOSFET technology ensures consistent and dependable performance across diverse operating conditions, while the compact TO-220 package eases integration into electronic circuits. Moreover, the IRFS4010-7PPBF incorporates vital protection features such as overcurrent and overtemperature protection, fortifying the MOSFET and the overall system against damage from excessive currents or temperatures. To sum up, the IRFS4010-7PPBF power MOSFET is the ideal choice for demanding power management applications in industrial and automotive settings, thanks to its high voltage tolerance, low on-state resistance, and robust protection features
主な特長
- Power MOSFETs suitable for motor control, DC-DC converters
- Synchronous rectification and more with IRFS40 series
- High-performance applications require reliable power components
- MOSFET technology offers low losses and high efficiency
応用
- Industrial-grade quality
- Fast switching speed
- High power capabilities
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-263-7 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 190 A | Rds On - Drain-Source Resistance | 3.3 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 150 nC |
Pd - Power Dissipation | 380 W | Brand | Infineon Technologies |
Configuration | Single | Height | 4.4 mm |
Length | 10 mm | Product Type | MOSFET |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 9.25 mm |
Part # Aliases | SP001552284 | Unit Weight | 0.056438 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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