• packageimg
packageimg

APT20M22JVR

Product description: MOSFET with 200V voltage rating and 22mOhm resistance in SOT-227 package

数量 単価(USD) 合計金額
1 $36.249 $36.25
200 $14.028 $2,805.60
500 $13.535 $6,767.50
1000 $13.291 $13,291.00

在庫：9,948

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください APT20M22JVR このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 APT20M22JVR

Featuring the APT20M22JVR Power MOS 7® series, these N-Channel enhancement mode power MOSFETS are designed to minimize loss and handle high voltages efficiently. By reducing both conduction and switching losses through lower RDS(ON) and Qg, Power MOS 7® ensures rapid switching speeds ideal for various applications.

In situations where striking a balance between performance and cost is essential, Power MOS V® continues to offer a viable solution. Utilizing a low resistance aluminum metal gate structure, Power MOS V® facilitates swift gate signal propagation, resulting in remarkably low internal chip equivalent gate resistances (EGR) compared to competitors.

For body diode options, users can choose between MOSFETs and FREDFETs in various voltage ratings. FREDFETs feature a faster recovery intrinsic body diode, improving reliability in ZVS circuits through shorter minority carrier lifetimes and enhanced commutation dv/dt ruggedness. Alternatively, MOSFET versions are available for applications not requiring a rapid recovery body diode.

主な特長

  • Battery Management Systems for Electric Vehicles
  • Power Electronics for Renewable Energy Systems
  • Smart Grid Technologies for Efficient Power Distribution

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Type Silicon Discrete MOSFET Continuous Drain Current at 25°C (A) [max] 56 - 176
Package Type(s) D3PAK, SOT-227, T-MAX, TO-247, TO-264 Continuous Drain Current at 25°C [I(D)] (A) [family max] 176

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

CM800HB-66H

CM800HB-66H

IGBT Modules IGBT MODULE HIGH VOLTAGE SINGLE
IXCH36N250

IXCH36N250

2500V N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 73A, 595W, TO-247 Package
IXFH40N30Q

IXFH40N30Q

IXFH40N30Q, 1-Element
RU1C001UNTCL

RU1C001UNTCL

Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits
FGH75N60UFTU

FGH75N60UFTU

FS Planar IGBT Transistors, N-Type, capable of handling 75A current at 600V voltage
IXSH30N60C

IXSH30N60C

Transistor IGBT Chip designed with N-type channel, suitable for 600V and 55A operations, housed in TO-247AD package
PSMN2R6-40YS

PSMN2R6-40YS

SOT669 N-Channel Trench MOSFET with 40V and 100A
CLF1G0035-100P

CLF1G0035-100P

Product CLF1G0035-100P is a 100W SOT-1228A MOSFET compliant with ROHS standards
2SC3506

2SC3506

800V Breakdown Voltage
IXXK200N65B4

IXXK200N65B4

Trans IGBT Chip N-CH 650V 370A 1150W 3-Pin(3+Tab) TO-264