IPP075N15N3GXKSA1

Meet the IPP075N15N3GXKSA1, a cutting-edge power field-effect transistor tailored for high-current applications. Boasting a remarkable 100A I(D) rating and a 150V voltage capacity, this N-channel MOSFET is engineered to deliver superior power management capabilities. Its ultra-low 0.0075ohm on-resistance ensures minimal power loss and optimal efficiency in a wide range of electronic circuits. The TO-220AB package simplifies installation and promotes reliable performance, while the green plastic housing offers both durability and visual appeal. Constructed from silicon with a metal-oxide semiconductor design, this 1-element transistor guarantees exceptional reliability and longevity in challenging operating conditions. Whether utilized in industrial machinery, automotive systems, or power sources, the IPP075N15N3GXKSA1 stands out as a top-tier component for achieving peak device efficiency

主な特長

• N-channel, logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175°C operating temperature
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21