IRFS4610PBF
N-Channel Silicon Power MOSFET, 73A Drain Current, 100V Voltage Rating, TO-263AB Package, 0.014ohm On-Resistance
在庫：9,511
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IRFS4610PBF
-
パッケージ/ケース : TO-252-3
-
ブランド : Infineon
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : IRFS4610PBF データシート (PDF)
概要 IRFS4610PBF
Designed to withstand challenging operating conditions, the IRFS4610PBF boasts a rugged and reliable construction that can endure high temperatures and transient voltage spikes. Its TO-220AB package provides thermal stability and facilitates easy mounting on heat sinks, enabling effective heat dissipation for optimal performance. This makes it an ideal choice for industrial and automotive applications that demand high current handling capabilities and fast switching speeds
主な特長
- Increased power density
- Limited inrush current
- Fault detection and notification
応用
- Power tools
- Solar inverters
- Medical equipment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 73 A | Rds On - Drain-Source Resistance | 14 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 90 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 190 W |
| Channel Mode | Enhancement | Brand | Infineon Technologies |
| Configuration | Single | Fall Time | 70 ns |
| Forward Transconductance - Min | 73 S | Height | 2.3 mm |
| Length | 6.5 mm | Product Type | MOSFET |
| Rise Time | 87 ns | Factory Pack Quantity | 50 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 53 ns |
| Typical Turn-On Delay Time | 18 ns | Width | 6.22 mm |
| Part # Aliases | SP001557422 | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IRF3415PBF
43 amp current rating
IRF7324TRPBF
Silicon P-Type MOSFET with a Maximum Voltage of 20V and Current Handling Capability of 9A
IRF7832TRPBF
8-pin surface-mount N-channel MOSFET with a 30-volt, 20-amp rating
IRF7831TRPBF
30V N Channel MOSFET with 21A current rating and 3.6mΩ resistance at 10V
IRFB3307ZPBF
Tube Packaging for IRFB3307ZPBF N-Channel Silicon MOSFET with 3 Pins and a Tab
IRFB4310ZPBF
100 V HEXFET Infineon IRFB4310ZPBF N-channel MOSFET, 127 A, 3-Pin TO-220AB
IRFHM8326TRPBF
Single N-Channel 30 V 4.7 mOhm 39 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
IRFP054NPBF
MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC
IRFP4227PBF
Part number IRFP4227PBF
IRFR7540TRPBF
Power Field-Effect Transistor
IXFN36N100
Power Field-Effect Transistor IXFN36N100 - A high-performance semiconductor device for power management applications
BSM100GB120DLCK
Module-7 Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel
DMP2160UW-7
Small Signal Field-Effect Transistor
IRFBE30PBF
oxide-semiconductor field-effect transistor
MUN5233DW1T1G
Dual NPN Bipolar Transistors - Pre-Biased 100mA 50V BRT
SI4401DDY-T1-GE3
Transistor MOSFET P-CH 40V 10.2A 8-Pin SOIC in Tape and Reel packaging
DMN24H3D5L-7
MOSFET N-Ch Enh Mode FET 240V 20Vgss
IPW60R041C6FKSA1
600V N-channel MOSFET with a current rating of 77.5A
APT75GP120J
1200V N-Channel IGBT Transistor Module
PD55015S
RF MOSFET Transistors N-Ch with a 40 Volt rating and 5 Amp capacity