IRG4BH20K-SPBF
Infineon IRG4BH20K-SPBF IGBT, 11 A 1200 V, 3-Pin D2PAK (TO-263)
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.657 | $2.66 |
| 200 | $1.029 | $205.80 |
| 500 | $0.993 | $496.50 |
| 1000 | $0.974 | $974.00 |
在庫：6,572
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部品番号 : IRG4BH20K-SPBF
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パッケージ/ケース : TO-263-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4BH20K-SPBF データシート (PDF)
概要 IRG4BH20K-SPBF
The IRG4BH20K-SPBF is an IGBT (Insulated Gate Bipolar Transistor) with a collector emitter voltage (Vces) of 1200V and a DC collector current of 11A. It is designed for use in high power applications where efficient power control is crucial. With a power dissipation of 60W, this IGBT can effectively handle high power levels without overheating. The TO-263 case style and SMD termination type make it suitable for surface mount applications, while its N Channel polarity ensures reliable and efficient performance. The IRG4BH20K-SPBF is designed for high-speed switching applications, with a rise time of 26ns and a pulsed current rating of 22A. These features make it an ideal choice for applications requiring high voltage, high current, and high power capabilities
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 11 A |
| Current - Collector Pulsed (Icm) | 22 A | Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Power - Max | 60 W | Switching Energy | 450µJ (on), 440µJ (off) |
| Input Type | Standard | Gate Charge | 28 nC |
| Td (on/off) @ 25°C | 23ns/93ns | Test Condition | 960V, 5A, 50Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Supplier Device Package | D2PAK |
| Base Product Number | IRG4BH20 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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