ISC800P06LMATMA1
Trans MOSFET P-CH 60V 19.6A 8-Pin TDSON EP T/R
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部品番号 : ISC800P06LMATMA1
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パッケージ/ケース : PG-TDSON-8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : ISC800P06LMATMA1 データシート (PDF)
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Series : ISC800P06LM
概要 ISC800P06LMATMA1
P-Channel 60 V 19.6A (Tc) 83W (Tc) Surface Mount PG-TDSON-8
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | ISC800P06 | Product Status | Active |
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 19.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 80mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 2V @ 724µA | Gate Charge (Qg) (Max) @ Vgs | 14.8 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 30 V |
Power Dissipation (Max) | 83W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8 |
Package / Case | PG-TDSON-8 | Manufacturer | Infineon |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 19.6 A | Rds On - Drain-Source Resistance | 80 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 16 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 83 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 13.5 ns |
Forward Transconductance - Min | 22 S | Product Type | MOSFET |
Rise Time | 1.8 ns | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 35.8 ns |
Typical Turn-On Delay Time | 3.9 ns | Part # Aliases | ISC6X0P06LM SP005412122 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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