IXFK32N80Q3

Offering a broad range of devices with exceptional power switching performance, the Q3-Class series Power MOSFETs are designed to meet the diverse needs of end-users. With drain-to-source voltage ratings spanning from 200V to 1000V and drain current ratings from 10A to 100A, these MOSFETs deliver superior thermal characteristics, enhanced device ruggedness, and high energy efficiency. The Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in significant reductions in conduction and switching losses. This is further enhanced through the utilization of our proven HiPerFETTM process, which yields a device with a fast intrinsic rectifier and low reverse recovery charge (Qrr), while also enhancing the commutating dV/dt ratings of the device (up to 50V/ns)

主な特長

• Excellent Overvoltage Protection
• High Current Handling Capability
• Low Power Dissipation
• Simplified Gate Driver Design

応用

• Powerful and Compact
• Efficient Power Delivery
• Space-saving Solutions