IXFK420N10T
|
N-channel MOSFET transistor, 100V, 420A, TO-264 package |
Ixys Integrated Circuits Division |
8,033 |
|
IXGK120N120A3
|
N-channel insulated gate bipolar transistor with high voltage capability |
Ixys Integrated Circuits Division |
7,639 |
|
IXGK120N60B
|
With its high voltage and current ratings, this trans IGBT chip offers reliable and efficient operation |
Ixys Integrated Circuits Division |
7,757 |
|
IXTK210P10T
|
Trench power MOSFETs for efficient performance |
Ixys Integrated Circuits Division |
3,785 |
|
IXTK40P50P
|
P-MOSFET transistor with PolarP™ technology |
Ixys Integrated Circuits Division |
6,382 |
|
IXTK90P20P
|
This MOSFET, designated as IXTK90P20P, offers a maximum current capacity of 90 |
Ixys Integrated Circuits Division |
7,202 |
|
IXTK32P60P
|
Field-Effect Transistor for power applications |
Ixys Integrated Circuits Division |
8,841 |
|
IXFK44N80P
|
N-channel power MOSFET with 800V voltage rating and 44A current rating |
Ixys Integrated Circuits Division |
7,903 |
|
IXTK60N50L2
|
MOSFET with a 60 Amps and 500V rating |
Ixys Integrated Circuits Division |
9,607 |
|
IXTK140N20P
|
TO-264 MOSFETs compliant with RoHS |
Ixys Integrated Circuits Division |
6,170 |
|
IXXK300N60B3
|
IXXK300N60B3 - XPT 600V IGBT 300A Transistors: These transistors feature a voltage rating of 600V and a current rating of 300A |
Ixys Integrated Circuits Division |
9,759 |
|
IXTK120P20T
|
Ideal for high-power applications requiring efficient switching capabilities |
Ixys Integrated Circuits Division |
5,124 |
|
IXTK170P10P
|
-170A -100V 890W Transistor TO264 |
Ixys Integrated Circuits Division |
9,305 |
|
IXFK140N30P
|
140 Amps MOSFET capable of handling 300 Volts with a low Rds(on) of 0.024 Ohms |
Ixys Integrated Circuits Division |
4,119 |
|
IXFK160N30T
|
Suitable for high current applications up to 160A and 300V voltage requirements |
Ixys Integrated Circuits Division |
8,874 |
|
IXFK230N20T
|
MOSFETs TO-264AA ROHS |
Littelfuse |
5,819 |
|
IXTK22N100L
|
channel 1000V MOSFET with a current rating of 22A |
Ixys Integrated Circuits Division |
6,981 |
|
IXFK300N20X3
|
Transistor MOSFET, N-channel, 200V, 300A, 3-pin TO-264 package |
Ixys Integrated Circuits Division |
9,492 |
|
IXFK120N20
|
Inquire for specifics |
Ixys Integrated Circuits Division |
5,197 |
|
IXFK90N20
|
This MOSFET, designated as IXFK90N20, has a maximum voltage rating of 200V and a current rating of 90A |
Ixys Integrated Circuits Division |
9,869 |
|
IXFK55N50
|
IXFK55N50 is a power FET capable of handling currents up to 55A and voltages of 500V, with a low on-resistance of 0 |
Ixys Integrated Circuits Division |
6,255 |
|
APT34N80LC3G
|
Product APT34N80LC3G is a high-voltage MOSFET with a rating of 800 volts |
Microchip Technology |
8,980 |
|
IXGK60N60C2D1
|
High-frequency IGBT with fast diode 60A 600V in TO264 package |
Ixys Integrated Circuits Division |
9,092 |
|
IXXK200N65B4
|
Trans IGBT Chip N-CH 650V 370A 1150W 3-Pin(3+Tab) TO-264 |
Ixys Integrated Circuits Division |
8,031 |
|
IXXK110N65B4H1
|
TO-264 IGBT capable of handling 650 Volts at 250 Amps |
Ixys Integrated Circuits Division |
6,117 |
|
FGL40N120ANDTU
|
64A Continuous Current |
Onsemi |
8,451 |
|
MJL4281AG
|
Designed as part of the MJL Series |
Onsemi |
8,572 |
|
MJL21195G
|
Product MJL21195G from ON Semiconductor is a PNP bipolar junction transistor |
Onsemi |
7,270 |
|
MJL21193G
|
ON SEMICONDUCTOR MJL21193G |
Onsemi |
7,912 |
|
APT5010LVRG
|
Product APT5010LVRG, a MOSFET with a voltage rating of 500V and a resistance of 10 Ohms, presented in TO-264 package, meets RoHS compliance |
Microchip Technology |
9,647 |
|
RM50HG-12S
|
1 Phase Silicon Rectifier Diode with 1 Element, 50A and 600V V(RRM) |
Powerex Inc. |
8,981 |
|
RM25HG-24S
|
Rectifier Diode with 25A, 1200V V(RRM), Silicon Material, 1 Phase, 1 Element |
Powerex Inc. |
6,013 |
|
MTY30N50E
|
The MTY30N50E is a MOSFETs component that meets ROHS standards |
Onsemi |
8,872 |
|
MTY25N60E
|
MOSFETs MTY25N60E ROHS |
Onsemi |
8,786 |
|
NTY100N10
|
TO-3BPL N-CHANNEL POWER MOSFET, 100V, 0.01ohm |
Onsemi |
7,903 |
|
APT64GA90LD30
|
APT64GA90LD30 - 900V Punch-Thru Insulated Gate Bipolar Transistor |
Microchip Technology |
6,423 |
|
APT50GN120L2DQ2G
|
Power Semiconductor Device for High Power Applications |
Microchip Technology |
7,580 |
|
DSEC120-12AK
|
Rectifier Diode Switching 1.2KV 60A 80ns 3-Pin(3+Tab) TO-264AA |
Ixys Integrated Circuits Division |
6,133 |
|
IXFK26N100P
|
TO-264AA MOSFETs compliant with ROHS |
Ixys Integrated Circuits Division |
4,156 |
|
IXGK50N120C3H1
|
IGBT Modules High Frequency Range 40khz C-IGBT w/Diode |
Ixys Integrated Circuits Division |
2,730 |
|
IXGK55N120A3H1
|
IGBT Modules Low-Frequency Range Low Vcesat w/ Diode |
Ixys Integrated Circuits Division |
3,387 |
|
IXTK90N25L2
|
Channel 250V 33mOhm 960W Power MOSFET TO-264 - IXTK90N25L2 |
Ixys Integrated Circuits Division |
6,203 |
|
IXTK170N10P
|
100V MOSFET capable of handling 170 Amps with low 0.009 Ohm Rds |
Ixys Integrated Circuits Division |
2,774 |
|
IXFL60N80P
|
42 Amps, 800V, 0.15 Rds MOSFET |
Ixys Integrated Circuits Division |
3,809 |
|
IXFK320N17T2
|
The IXFK320N17T2 MOSFET: Rated for a maximum voltage of 170V and capable of handling currents up to 320A, housed in a TO-264 package |
Ixys Integrated Circuits Division |
6,066 |
|
IXFK78N50P3
|
TO-264AA package containing a high-power N-Channel MOSFET with a 500V voltage rating and 78A current rating |
Ixys Integrated Circuits Division |
7,195 |
|
IXFK64N50Q3
|
High-power N-channel MOSFET with 500V and 64A in TO-264 configuration |
Ixys Integrated Circuits Division |
4,980 |
|
IXFK32N80Q3
|
MOSFET transistor for Class Q3 |
Ixys Integrated Circuits Division |
5,909 |
|
IXFK44N80Q3
|
ROHS certified TO-264AA MOSFETs |
Ixys Integrated Circuits Division |
3,181 |
|
IXFK80N50Q3
|
MOSFET DIS 80A 500V N-Channel TO264 HIPERFET Through-Hole Technology |
Ixys Integrated Circuits Division |
5,446 |
|