SI4936CDY-T1-GE3
Surface Mount 30 V Power Mosfet in SOIC-8 Package
在庫：9,065
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- 365日の品質保証
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部品番号 : SI4936CDY-T1-GE3
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パッケージ/ケース : SOIC-8
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ブランド : Siliconix
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コンポーネントの分類 : FET, MOSFET Arrays
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日付シート : SI4936CDY-T1-GE3 データシート (PDF)
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Series : SI4936CDY
概要 SI4936CDY-T1-GE3
The SI4936CDY-T1-GE3 is a dual N-channel MOSFET with a maximum drain-source voltage of 30V and a continuous drain current of 5.8A. It comes in an 8-pin package and is not RoHS compliant. This MOSFET is suitable for a variety of applications that require high power and efficiency
主な特長
- Precise current control and monitoring
応用
- Power management circuits in various electronic devices.
- Motor control systems for robotics and industrial applications.
- Battery charging and power supply circuits.
- LED lighting applications.
- Power distribution and conversion systems.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
| Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 5.8 A |
| Rds On - Drain-Source Resistance | 40 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 9 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.3 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI4 |
| Brand | Vishay Semiconductors | Configuration | Dual |
| Height | 1.75 mm | Length | 4.9 mm |
| Product Type | MOSFET | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Width | 3.9 mm |
| Part # Aliases | SI4936CDY-GE3 | Unit Weight | 0.006596 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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