MJE521
Trans GP BJT NPN 40V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube
在庫：5,252
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MJE521
-
パッケージ/ケース : SOT-32-3
-
Brand : ST
-
Components Classification : Single Bipolar Transistors
-
日付シート : MJE521 データシート (PDF)
-
Series : MJE521
概要 MJE521
...designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry.
主な特長
- DC Current Gain
hFE = 40 (Min) @ IC
= 1.0 Adc - Complementary to PNP MJE371
- Pb-Free Package is Available
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | MJE521 | Pbfree Code | No |
| Part Life Cycle Code | Obsolete | Ihs Manufacturer | ON SEMICONDUCTOR |
| Part Package Code | TO-225 | Package Description | PLASTIC, CASE 77-09, TO-225, 3 PIN |
| Pin Count | 3 | Manufacturer Package Code | 77-09 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | onsemi | Collector Current-Max (IC) | 4 A |
| Collector-Emitter Voltage-Max | 40 V | Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 40 | JEDEC-95 Code | TO-225AA |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e0 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 135 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 235 | Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 40 W | Qualification Status | Not Qualified |
| Surface Mount | NO | Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
APT28M120B2
Packaged in a T-MAX tube
BCP5316TA
80 V 1 A 2 W Medium Power Transistor
MMUN2212LT1
Bipolar Transistors - Pre-Biased NPN BRT, 100mA 50V (Product MMUN2212LT1)
SSTA06HZGT116
SSTA06HZG is an automotive transistor renowned for its high reliability, making it ideal for small signal amplification in audio frequencies
CAS100H12AM1
1200V, 100A MODULE SIC Z-FET, Z-REC
2N1671A
type silicon unijunction transistors, PN transistors, 2N1671A product, silicon transistors
DMN62D1SFB-7B
Featuring a 3DFN package, this MOSFET is an N-channel type designed for operation with voltages up to 60V and currents of 410mA
NSS1C200LT1G
PNP Bipolar Junction Transistor (BJT) designed for General Purpose Applications with a Maximum Voltage Rating of 100V and Current Rating of 2A
BCW71,215
BCW71 BCW72 NPN transistors for general purposes TO-236 3-Pin
IRF612
Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm