NSS1C200LT1G
PNP Bipolar Junction Transistor (BJT) designed for General Purpose Applications with a Maximum Voltage Rating of 100V and Current Rating of 2A
在庫：6,570
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : NSS1C200LT1G
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パッケージ/ケース : SOT23-3
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ブランド : Onsemi
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コンポーネントの分類 : Single Bipolar Transistors
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日付シート : NSS1C200LT1G データシート (PDF)
概要 NSS1C200LT1G
When it comes to low voltage, high-speed switching applications, the NSS1C200LT1G stands out as a superior choice. With its miniature surface mount design and ultra low saturation voltage VCE(sat), this transistor offers unparalleled performance and energy efficiency. Say goodbye to inefficient control and hello to affordable, reliable power management with this exceptional product
主な特長
- Automotive Qualified, AECQ101 Compliance
- Robust ESD Protection, Low Capacitance
- Wide Operating Range, High Reliability
応用
- Low Drop Out Regulation, LED Driver, Voltage Control
- Complimentary Driver, Current Extention, Motor Control
- Cathode Florescent Lamp Drive, External Pass Transistor
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | SOT-23-3 | Case Outline | 318-08 |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 3000 |
| ON Target | Y | Polarity | PNP |
| Type | Low VCE(sat) | VCE(sat) Max (V) | 0.115 |
| IC Cont. (A) | 2 | VCEO Min (V) | 100 |
| VCBO (V) | 140 | VEBO (V) | 7 |
| VBE(sat) (V) | 0.95 | VBE(on) (V) | 0.85 |
| hFE Min | 120 | hFE Max | 360 |
| PTM Max (W) | 0.71 | Pricing ($/Unit) | $0.1316Sample |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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