• packageimg
packageimg

MMBT3906L

Trans GP BJT PNP 40V 0.2A 350mW 3-Pin SOT-23 T/R

在庫：7,368

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください MMBT3906L このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 MMBT3906L

The MMBT3906L is a versatile PNP bipolar transistor that offers a maximum collector current of 200mA and a maximum collector-base voltage of 40V. With its low saturation voltage of 0.2V and high current gain (hfe) of 100-250, this transistor is perfect for amplification and switching circuits in a variety of applications, including audio amplifiers, voltage regulators, and LED drivers. Its small SOT-23 surface mount package makes it ideal for high-density circuit applications, and its low cost and compact size make it popular for use in portable electronic devices

主な特長

  • Fully Compliant with IEC, UL and VDE Standards
  • AEC-Q101 Qualified for Automotive Applications
  • RoHS Compliant and Pb-Free Halogen Free/BFR Free
  • Qualifiable per PPAP and Control Plan
  • Suitable for High-Reliability Applications
  • Low Noise, Low Dropout Operation Available

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Taiwan Semiconductor Product Category Bipolar Transistors - BJT
Brand Taiwan Semiconductor Product Type BJTs - Bipolar Transistors
Subcategory Transistors

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

IXSH30N60C

IXSH30N60C

Transistor IGBT Chip designed with N-type channel, suitable for 600V and 55A operations, housed in TO-247AD package
SI7234DP-T1-GE3

SI7234DP-T1-GE3

Transistor MOSFET Array
2N6213

2N6213

2N6213 is categorized under Bipolar Transistors, specifically Power BJT, indicating its suitability for high-power circuitry
AOD2910E

AOD2910E

AOD2910E is a field-effect transistor optimized for N-channel operation, designed to manage voltages up to 100 volts and currents up to 11 amps
2SB1259

2SB1259

2SB1259: Power Bipolar Transistor with 10A Collector Current and 120V Collector-Emitter Breakdown Voltage
IXFA80N25X3

IXFA80N25X3

Field-effect transistor for power applications
DMP1046UFDB-7

DMP1046UFDB-7

P-Channel MOSFET with 12V voltage rating and 3.8A current capability
MTI145WX100GD-SMD

MTI145WX100GD-SMD

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package
IRG4PC30FDPBF

IRG4PC30FDPBF

These IGBTs come in a TO-247AC package and are capable of handling 100 watts of power
ZXMP10A17E6TA

ZXMP10A17E6TA

100V P-Channel MOSFET with 1.6A rating in SOT-23 package on tape reel