IXSH30N60C
Transistor IGBT Chip designed with N-type channel, suitable for 600V and 55A operations, housed in TO-247AD package
在庫：7,574
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部品番号 : IXSH30N60C
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXSH30N60C データシート (PDF)
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Series : IXSH30N60
概要 IXSH30N60C
IGBT PT 600 V 55 A 200 W Through Hole TO-247AD
主な特長
- Reduced power losses
- Improved system reliability
- Faster charging times
- Eco-friendly energy solution
応用
- Grid-tied systems
- Hybrid vehicles
- Power distribution
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.5 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | IXSH30N60 |
| Brand | IXYS | Continuous Collector Current | 55 A |
| Continuous Collector Current Ic Max | 55 A | Height | 21.46 mm |
| Length | 16.26 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 30 | Subcategory | IGBTs |
| Width | 5.3 mm | Unit Weight | 0.229281 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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