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FDMT800100DC

With its low input capacitance and fast switching time

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概要 FDMT800100DC

The FDMT800100DC N-Channel MOSFET utilizes cutting-edge PowerTrench® technology to achieve exceptional performance. By integrating silicon and Dual CoolTM package advancements, this MOSFET boasts the lowest rDS(on) in its class while delivering outstanding switching capabilities. Its ultra-low Junction-to-Ambient thermal resistance ensures optimal efficiency and reliability in high-power applications

主な特長

  • High reliability and long term stability
  • Silicon based device with high temperature capability
  • Fast switching times and low electromagnetic radiation
  • Compliance with MIL-STD-883 standard

応用

  • Compact Power Solution
  • Enhanced Power Distribution
  • Intelligent Power Control

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMT800100DC Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 24A (Ta), 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.95mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7835 pF @ 50 V
Power Dissipation (Max) 3.2W (Ta), 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-Dual Cool™88
Package / Case DualCool-88-8 Base Product Number FDMT800100
Manufacturer onsemi Product Category MOSFET
RoHS Details REACH Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 162 A Rds On - Drain-Source Resistance 5.39 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 79 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 156 W
Channel Mode Enhancement Tradename PowerTrench
Brand onsemi / Fairchild Configuration Single
Fall Time 10 ns Forward Transconductance - Min 66 S
Height 0.8 mm Length 3.3 mm
Product Type MOSFET Rise Time 18 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-channel Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 29 ns Width 3.3 mm
Unit Weight 0.008766 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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