NDP6060
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube
在庫:6,626
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部品番号 : NDP6060
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パッケージ/ケース : TO-220-3
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : NDP6060 データシート (PDF)
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Series : NDP6060
概要 NDP6060
The NDP6060 is an N-Channel enhancement mode power field effect transistor designed to deliver superior performance in low voltage applications. Utilizing ON Semiconductor's high cell density DMOS technology, these transistors offer minimized on-state resistance, exceptional switching capabilities, and resilience against high energy pulses in avalanche and commutation modes. These features make the NDP6060 particularly well-suited for a range of applications including automotive, DC/DC converters, PWM motor controls, and battery-powered circuits requiring fast switching, low power loss, and resistance to transients. With its advanced design and high performance characteristics, the NDP6060 is a reliable choice for demanding voltage-sensitive systems
主な特長
- 48A, 60V. RDS(ON) = 0.025Ω@ VGS=10V.
- Critical DC electrical parameters specified at elevated temperature.
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
- 175°C maximum junction temperature rating.
- High density cell design for extremely low RDS(ON).
- TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
応用
- This product is general usage and suitable for many different applications.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 48 A |
Rds On - Drain-Source Resistance | 25 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 70 nC |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 100 W | Channel Mode | Enhancement |
Series | NDP6060 | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 77 ns |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 145 ns |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 28 ns | Typical Turn-On Delay Time | 10 ns |
Width | 4.7 mm | Part # Aliases | NDP6060_NL |
Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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