STB36NM60ND
STB36NM60ND is a N-channel MOSFET transistor designed for automotive applications
在庫：9,296
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STB36NM60ND
-
パッケージ/ケース : D2PAK-3
-
Brand : Stmicroelectronics
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STB36NM60ND データシート (PDF)
-
Series : STW36NM60N
概要 STB36NM60ND
N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount TO-263 (D2PAK)
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 29 A | Rds On - Drain-Source Resistance | 110 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 80.4 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 190 W |
| Channel Mode | Enhancement | Qualification | AEC-Q101 |
| Series | STW36NM60N | Brand | STMicroelectronics |
| Configuration | Single | Fall Time | 61.8 ns |
| Product Type | MOSFET | Rise Time | 53.4 ns |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 111 ns |
| Typical Turn-On Delay Time | 30 ns | Unit Weight | 0.139332 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
IRF9321PBF
IRF9321PBF features P-Channel MOSFET design, Hexfet technology, low 7.2 milliohms resistance, and high 34 nanocoulombs gate charge
BSM100GB120DLCK
Module-7 Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel
2N1671B
TO-5 3-Pin Silicon Unijunction Transistor
IXFN210N20P
IXFN210N20P, classified as a Power Field-Effect Transistor, boasts a high current rating of 188A and a voltage tolerance of 200V
IRF5802TRPBF
TSOP-6 packaged N-channel MOSFETs capable of 150V and 900mA with RoHS compliance
SI7913DN-T1-GE3
ROHS compliant for environmental responsibility
BLF881,112
Radio Frequency Field-Effect Transistor (RF FET) based on LDMOS technology, with a voltage rating of 104V and a gain of 21dB, packaged in SOT467C
IRFD220PBF
MOSFET N-CH 200V HEXFET MOSFET HEXDI
IRFR220NPBF
IRFR220NPBF N-Channel MOSFET in Tube Packaging, Rated for 200V and 5A
BSS127H6327XTSA2
N-channel MOSFET with a 21 mA current rating, suitable for a wide variety of electronic applications