• packageimg
packageimg

NDS0610

-60V P-Channel Enhancement Mode Field Effect Transistor with a -0.12A rating and 10Ω resistance

数量 単価(USD) 合計金額
5 $0.100 $0.50
50 $0.081 $4.05
150 $0.073 $10.95
500 $0.067 $33.50
3000 $0.053 $159.00
6000 $0.051 $306.00

在庫：7,316

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください NDS0610 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 NDS0610

This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0610 can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

主な特長

  • High isolation voltage rating
  • Durable construction ensures long lifespan
  • Compact size reduces PCB real estate
  • Wide DC input voltage range
  • Suitable for automotive applications
  • UL recognized and compliant with RoHS

応用

  • Useful in many different ways.
  • Essential for everyday tasks.
  • Convenient and easy to use.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 120 mA Rds On - Drain-Source Resistance 10 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 2.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 360 mW
Channel Mode Enhancement Series NDS0610
Brand onsemi / Fairchild Configuration Single
Fall Time 6.3 ns Height 1.2 mm
Length 2.9 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 6.3 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 2.5 ns Width 1.3 mm
Part # Aliases NDS0610_NL Unit Weight 0.000282 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

BSC010N04LS6ATMA1

BSC010N04LS6ATMA1

BSC010N04LS6ATMA1 Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R
ACS302-5T3

ACS302-5T3

20-pin small outline (SO) tube package for easy installation
TSM2N7002KCX

TSM2N7002KCX

0V N-channel MOSFET with 0.2Amp current rating
NJVMJD31CT4G

NJVMJD31CT4G

Transistor NPN 100V 3A for Automotive Applications
BLF278C

BLF278C

High voltage and high current capability
IRFP150PBF

IRFP150PBF

IRFP150PBF N-Channel MOSFET, 41 A, 100 V, 3-Pin TO-247AC Vishay
IRFP250MPBF

IRFP250MPBF

Silicon N-channel MOSFET with 200V voltage and 30A current in TO-247AC casing
NDFP03N150CG

NDFP03N150CG

NDFP03N150CG is a high-performance N-Channel Power MOSFET designed for applications requiring a voltage rating of 1500V
2N7002VC-7

2N7002VC-7

2N7002VC-7: Small-outline transistor (SOT-563) featuring N-channel MOSFET technology, capable of handling voltages up to 60V and currents up to 0.28A
BSM75GB60DLC

BSM75GB60DLC

Dual IGBT Modules with a maximum voltage of 600V and current rating of 75A