NGTB25N120LWG
Trans IGBT Chip
在庫：9,438
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- 365日の品質保証
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部品番号 : NGTB25N120LWG
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パッケージ/ケース : TO-247-3
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Brand : Onsemi
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Components Classification : Single IGBTs
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日付シート : NGTB25N120LWG データシート (PDF)
概要 NGTB25N120LWG
The NGTB25N120LWG Insulated Gate Bipolar Transistor is designed to deliver exceptional performance in high-demand switching applications. With its Field Stop Trench construction, this IGBT offers a robust and cost-effective solution for industries requiring low on-state voltage and minimal switching loss. Its innovative design makes it ideal for resonant or soft switching applications, providing users with a reliable and efficient solution for their power management needs. Additionally, the device features a rugged co-packaged free wheeling diode with a low forward voltage, further enhancing its performance and versatility
主な特長
- High Voltage Tolerance and Isolation
- Fault-Tolerant Redundancy Design
- Safe Operating Area for Reliable Operation
- Limited Power Consumption for Energy Efficiency
応用
- Industrial Automation
- HVAC Systems
- Gaming Consoles
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Obsolete | Compliance | PbAHP |
| Package Type | TO-247-3 | Case Outline | 340L-02 |
| MSL Type | NA | MSL Temp (°C) | 0 |
| Container Type | TUBE | Container Qty. | 30 |
| ON Target | N | V(BR)CES Typ (V) | 1200 |
| IC Max (A) | 25 | VCE(sat) Typ (V) | 1.85 |
| VF Typ (V) | 1.7 | Eoff Typ (mJ) | 0.8 |
| Eon Typ (mJ) | 3.4 | Gate Charge Typ (nC) | 200 |
| Short Circuit Withstand (µs) | 5 | PD Max (W) | 192 |
| Co-Packaged Diode | Yes | Pricing ($/Unit) | Price N/A |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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