NGTB40N120LWG
Trans IGBT Chip N-CH 1200V 80A 260W 3-Pin(3+Tab) TO-247 Tube
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部品番号 : NGTB40N120LWG
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パッケージ/ケース : TO-247-3
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Brand : onsemi
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Components Classification : Single IGBTs
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日付シート : NGTB40N120LWG データシート (PDF)
概要 NGTB40N120LWG
The NGTB40N120LWG Insulated Gate Bipolar Transistor (IGBT) is a versatile and reliable semiconductor device that excels in demanding switching applications. Its Field Stop (FS) Trench construction provides a sturdy and cost-effective solution for various industrial needs. With low on-state voltage and minimal switching loss, this IGBT is a top choice for resonant or soft switching applications. The addition of a rugged co-packaged free wheeling diode with a low forward voltage further enhances the efficiency and performance of this cutting-edge device
主な特長
- High Efficiency Performance
- Limited EMI Radiation
- Able to Handle High Voltage
- Economical Solution
応用
- Gourmet Dining
- Fine Wines
- Decadent Desserts
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 80 A | Current - Collector Pulsed (Icm) | 320 A |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 40A | Power - Max | 260 W |
| Switching Energy | 5.5mJ (on), 1.4mJ (off) | Input Type | Standard |
| Gate Charge | 420 nC | Td (on/off) @ 25°C | 140ns/360ns |
| Test Condition | 600V, 40A, 10Ohm, 15V | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 | Base Product Number | NGTB40 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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