NSS40301MZ4T1G
Transistor General Purpose NPN 40V 3A SOT-223
在庫：5,186
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : NSS40301MZ4T1G
-
パッケージ/ケース : SOT-223
-
Brand : onsemi
-
Components Classification : Single Bipolar Transistors
-
日付シート : NSS40301MZ4T1G データシート (PDF)
-
Series : NSS40301
概要 NSS40301MZ4T1G
Designed for optimal performance, the NSS40301MZ4T1G is a versatile 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor that excels in high-speed switching applications. Its low saturation voltage and high gain characteristics make it an ideal choice for applications where energy conservation is a key concern. With a focus on power saving, this transistor delivers efficient operation without sacrificing speed or reliability. Engineers and developers can confidently integrate this component into their electronic designs, knowing that it will enhance the performance and efficiency of their systems
主な特長
- Fast Switching Time
- Low Input Current Noise
- High Power Dissipation Capability
- NSV Prefix for Automotive Applications
応用
- Efficient power conversion
- Compact voltage regulator
- High-performance motor control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | SOT-223-4 / TO-261-4D | Case Outline | 0.0318 |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 1000 |
| ON Target | Y | Polarity | NPN |
| Type | Low VCE(sat) | VCE(sat) Max (V) | 0.2 |
| IC Cont. (A) | 3 | VCEO Min (V) | 40 |
| VCBO (V) | 40 | VEBO (V) | 6 |
| VBE(sat) (V) | 1 | VBE(on) (V) | 0.9 |
| hFE Min | 200 | hFE Max | 500 |
| fT Min (MHz) | 100 | PTM Max (W) | 2 |
| Pricing ($/Unit) | $0.1608Sample |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
NSV60600MZ4T1G
Low VCE(sat) Transistor, PNP type, with 60 volts and 6.0 amps
AONS66811
N-Channel AlphaSGT2 with 80V rating
AUIRFZ24NS
Automotive N-channel silicon transistor with a voltage rating of 55V and current rating of 17A
BSC016N06NSATMA1
1.6 mOhm N-Channel Power Mosfet with 71 nC gate charge in TDSON-8 FL package
BSC021N08NS5ATMA1
OptiMOSTM5 MOSFET
BSC028N06NSTATMA1
8-Pin TDSON EP T/R Trans MOSFET N-Channel 60V 24A
BUP311D
Transistors employing Insulated Gate Bipolar Technology, designed for 1200 volts and 20 amperes
MMBTA42LT1
NPN Bipolar Junction Transistor with 305V Voltage Rating and 0.3A Current Rating in SOT-23 Package
BC847BTT1G
BC847BTT1G NPN SS GP XSTR SC75 45V RL
BUL1102EFP
NPN 450V 4A Power Bipolar Junction Transistor in TO-220FP Package
IRF7389TRPBF
Available in tape and reel packaging
FMMT491TA
Bipolar Junction Transistor NPN 60V 1A SOT-23
IRGB4062DPBF
Air Conditioner
CM400DU-24F
IGBT module suitable for switching applications in industrial settings and high power systems
DDTD142JC-7-F
SOT-23 NPN Transistor, 500mA Pre-Biased RL
BSZ042N06NSATMA1
60V N Channel MOSFET with 4.2mΩ resistance at 20A