NTMD4N03R2G
SO8 Dual N-Channel Power MOSFET, 30 Volts, 4 Amps
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.532 | $0.53 |
10 | $0.442 | $4.42 |
30 | $0.396 | $11.88 |
100 | $0.352 | $35.20 |
500 | $0.313 | $156.50 |
1000 | $0.299 | $299.00 |
在庫:6,369
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NTMD4N03R2G
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パッケージ/ケース : SOIC-8
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ブランド : Onsemi
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コンポーネントの分類 : FET, MOSFET Arrays
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日付シート : NTMD4N03R2G データシート (PDF)
概要 NTMD4N03R2G
Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual
主な特長
- Precise Current Limiting
- High Speed, Low Noise Operation
- Extensive Surge Protection
- Smart Power Management Control
- Advanced Error Detection Algorithm
- Efficient Energy Harvesting System
応用
- Solar Inverters, Wind Turbines, Electric Vehicles
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Status | Active | Compliance | PbAHP |
Package Type | SOIC-8 | Case Outline | 751-07 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 2500 |
ON Target | Y | Channel Polarity | N-Channel |
Configuration | Dual | V(BR)DSS Min (V) | 30 |
VGS Max (V) | 20 | VGS(th) Max (V) | 3 |
ID Max (A) | 4 | PD Max (W) | 2 |
RDS(on) Max @ VGS = 4.5 V (mΩ) | Q1=Q2=80 | RDS(on) Max @ VGS = 10 V (mΩ) | Q1=Q2=60 |
Qg Typ @ VGS = 10 V (nC) | 8 | Ciss Typ (pF) | 285 |
Pricing ($/Unit) | $0.2667Sample |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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