PMV60ENEAR
Suitable for applications requiring up to 7.5 watts of power dissipation
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.184 | $0.18 |
10 | $0.150 | $1.50 |
30 | $0.135 | $4.05 |
100 | $0.117 | $11.70 |
500 | $0.108 | $54.00 |
1000 | $0.103 | $103.00 |
在庫:8,736
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : PMV60ENEAR
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パッケージ/ケース : TO-236-3
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ブランド : Nexperia USA Inc.
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : PMV60ENEAR データシート (PDF)
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Series : PMV60ENEA
概要 PMV60ENEAR
With its compact SOT23 package, the PMV60ENEAR offers a convenient solution for designers looking to minimize board space while maintaining optimum performance. The use of enhancement mode technology allows for seamless integration into existing circuit designs, providing flexibility and ease of use. Whether used in power supply units or motor control systems, this FET delivers consistent performance and reliable operation
主な特長
- Silicon-on-Insulator (SOI) technology
- Reduced electromagnetic interference (EMI)
- Low power consumption
- Fault-tolerant architecture
応用
- Data transmission
- Voltage regulation
- Protection circuit
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 20 V | Power Dissipation (Max) | 615mW (Ta), 7.5W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB | Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | PMV60 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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