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RFD14N05LSM

Power N-channel MOSFET TO-252AA

在庫：5,008

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

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概要 RFD14N05LSM

Elevate your electronic systems with the RFD14N05LSM N-channel power MOSFET, a revolutionary product crafted through the cutting-edge MegaFET process. With feature sizes rivaling those found in LSI integrated circuits, this MOSFET offers unmatched performance and efficiency across a spectrum of applications. Designed for use in switching regulators, converters, motor drivers, and relay drivers, the RFD14N05LSM excels in delivering precise power management solutions. Its specialized gate oxide design ensures full rated conductance within the 3V-5V gate bias range, enabling seamless on-off power control directly from 5V logic level integrated circuits. Embrace the future of power MOSFET technology with the RFD14N05LSM

主な特長

  • Laser-Diode Array Illumination
  • Fiber-Optic Communications Systems
  • Wireless Local Area Networks

応用

  • Internet of Things
  • Artificial Intelligence
  • Cybersecurity

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Package Tube Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 100mOhm @ 14A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 Base Product Number RFD14N05

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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