RFP12P10
Silicon Power FET, P-Channel, 12 Amperes, 100 Volts, 0.3 Ohms
在庫：9,136
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- 365日の品質保証
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部品番号 : RFP12P10
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パッケージ/ケース : TO220-3
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ブランド : Onsemi
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : RFP12P10 データシート (PDF)
概要 RFP12P10
主な特長
- 12A, 80V and 100V
- rDS(ON)= 0.300Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature
- - TB334 “Guidelines for Soldering Surface Mount
- Components to PC Boards”
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | N |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 300 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 75 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 94 ns |
| Height | 16.3 mm | Length | 10.67 mm |
| Product Type | MOSFET | Rise Time | 90 ns |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 144 ns | Typical Turn-On Delay Time | 18 ns |
| Width | 4.7 mm | Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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