IXFN24N100
IXFN24N100 MOSFET with N-type polarity in SOT-227B housing
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $109.565 | $109.56 |
| 200 | $43.717 | $8,743.40 |
| 500 | $42.256 | $21,128.00 |
| 1000 | $41.535 | $41,535.00 |
在庫：8,113
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFN24N100
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パッケージ/ケース : SOT227-4
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXFN24N100 データシート (PDF)
概要 IXFN24N100
With product IXFN24N100 leading the pack, the N-Channel HiPerFET™ Standard series stands out for its ability to cater to the diverse needs of modern applications. These Power MOSFETs are engineered to provide a superior combination of low gate charge, ruggedness, and fast intrinsic diode to ensure optimal performance in both hard switching and resonant mode scenarios. Additionally, the availability of various standard industrial packages, including isolated types, further enhances the usability and flexibility of this series
主な特長
- Efficient Power Management
- High Reliability
- Compact Footprint
応用
- Powerful and compact
- Efficient energy conversion
- Versatile application usage
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 1000 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.39 |
| Continuous Drain Current @ 25 ℃ (A) | 24 | Gate Charge (nC) | 267 |
| Input Capacitance, CISS (pF) | 8700 | Thermal resistance [junction-case] (K/W) | 0.22 |
| Configuration | Single | Package Type | SOT-227 |
| Power Dissipation (W) | 568 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | No | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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