RSS070P05HZGTB
P Channel MOSFET
在庫:6,908
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部品番号 : RSS070P05HZGTB
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パッケージ/ケース : SOP-8
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Brand : Rohm Semiconductor
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Components Classification : Single FETs, MOSFETs
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日付シート : RSS070P05HZGTB データシート (PDF)
概要 RSS070P05HZGTB
ROHM Semiconductor's RSS070P05HZGTB power MOSFET is the perfect solution for engineers looking to minimize power loss and improve efficiency in their circuit designs. With a low on-state resistance of 70mΩ, this MOSFET can handle a continuous drain current of 2.4A while operating at a drain-source voltage of 50V. Its small-sized and surface-mount package, along with a Gate threshold voltage of 2-4V, makes it suitable for space-constrained applications that require easy triggering with standard logic level signals. Moreover, the fast switching speed and high avalanche energy capability of the RSS070P05HZGTB MOSFET make it reliable and robust in demanding operating conditions, while the built-in ESD protection ensures device safety during handling and assembly processes
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | FET Type | P-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 45 V |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 27mOhm @ 7A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 47.6 nC @ 5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 10 V | Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | 150°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP | Package / Case | SOP-8 |
Base Product Number | RSS070 | Manufacturer | ROHM Semiconductor |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 45 V |
Id - Continuous Drain Current | 7 A | Rds On - Drain-Source Resistance | 27 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 34 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement | Brand | ROHM Semiconductor |
Configuration | Single | Fall Time | 50 ns |
Product Type | MOSFET | Rise Time | 35 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | Power MOSFET | Typical Turn-Off Delay Time | 135 ns |
Typical Turn-On Delay Time | 31 ns | Part # Aliases | RSS070P05HZG |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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