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SBC856BDW1T1G

Trans GP BJT PNP 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

数量 単価(USD) 合計金額
1 $0.108 $0.11
10 $0.087 $0.87
30 $0.078 $2.34
100 $0.070 $7.00
500 $0.064 $32.00
1000 $0.061 $61.00

在庫：6,188

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください SBC856BDW1T1G このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 SBC856BDW1T1G

The SBC856BDW1T1G is a high-quality dual PNP transistor specifically designed to meet the demands of automotive applications. With a collector-emitter voltage V(br)ceo of -65V and a power dissipation Pd of 380mW, this transistor is capable of handling a DC collector current of 100mA. Its DC current gain hFE is rated at 150hFE, ensuring consistent and reliable performance. Housed in a compact SOT-363 package with 6 pins, this transistor operates at a maximum temperature of 150°C, making it suitable for use in challenging automotive environments. It meets the AEC-Q101 automotive qualification standard and has an MSL rating of MSL 1 - Unlimited. Furthermore, it is free from any SVHC (Substances of Very High Concern) as of the most recent update in June 2018

主な特長

  • Suitable for Aerospace and Defense Industries
  • High Current Handling up to 1 A
  • Efficient Energy Consumption Guaranteed

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V Power - Max 380mW
Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Package / Case SOT-363-6
Supplier Device Package SC-88/SC70-6/SOT-363 Base Product Number SBC856
Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 65 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 650 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 380 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series BC856B
Brand onsemi Continuous Collector Current - 100 mA
DC Collector/Base Gain hfe Min 220 DC Current Gain hFE Max 475
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Unit Weight 0.000988 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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