SISB46DN-T1-GE3
N-channel MOSFET transistor capable of handling 40V and 11.4A in an 8-pin PowerPAK 1212 EP package
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部品番号 : SISB46DN-T1-GE3
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パッケージ/ケース : PowerPAK®1212-8Dual
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Brand : Vishay Siliconix
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Components Classification : FET, MOSFET Arrays
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日付シート : SISB46DN-T1-GE3 データシート (PDF)
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Series : SISB46DN
概要 SISB46DN-T1-GE3
Mosfet Array 40V 34A (Tc) 23W Surface Mount PowerPAK® 1212-8 Dual
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | TrenchFET® | Product Status | Active |
| Technology | MOSFET (Metal Oxide) | Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V | Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.71mOhm @ 5A, 10V | Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 20V |
| Power - Max | 23W | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual | Base Product Number | SISB46 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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