SI3440DV-T1-E3
150 V Single N-Channel Power Mosfet with 0.375 Ohms - TSOP-6
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.871 | $0.87 |
10 | $0.721 | $7.21 |
30 | $0.649 | $19.47 |
100 | $0.573 | $57.30 |
500 | $0.468 | $234.00 |
1000 | $0.446 | $446.00 |
在庫:4,181
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : SI3440DV-T1-E3
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パッケージ/ケース : TSOP-6
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : SI3440DV-T1-E3 データシート (PDF)
概要 SI3440DV-T1-E3
Offering a robust N channel MOSFET solution, the SI3440DV-T1-E3 boasts impressive specifications suitable for a wide range of applications. With a maximum drain-source voltage of 150V and a continuous drain current of 1.5A, this transistor can handle high-power requirements with ease. The low on-resistance of 400mohm ensures efficient power conduction, while the threshold voltage of 4V and test voltage of 20V allow for precise control over the switching behavior. Equipped with 6 pins for easy connectivity, the SI3440DV-T1-E3 is a reliable choice for your electronic designs
主な特長
- Rise and fall times as low as 50ns
- High current handling up to 3A
- Silicon-based with robust construction
応用
- Advanced power management
- Robust and dependable
- Sleek design and function
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
Id - Continuous Drain Current | 1.5 A | Rds On - Drain-Source Resistance | 375 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 15 ns |
Forward Transconductance - Min | 4.1 S | Product Type | MOSFET |
Rise Time | 10 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 8 ns |
Part # Aliases | SI3440DV-E3 | Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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