SI3443CDV-T1-GE3
Small Signal Si Transistor, 20 V, 5970 mA"
在庫:7,723
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- 365日の品質保証
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部品番号 : SI3443CDV-T1-GE3
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パッケージ/ケース : TSOP-6
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : SI3443CDV-T1-GE3 データシート (PDF)
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Series : SI3443CDV
概要 SI3443CDV-T1-GE3
P-Channel 20 V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
主な特長
- –4 A, –20 V. RDS(ON) = 0.065 Ω @ VGS = –4.5 V
- RDS(ON) = 0.100 Ω @ VGS = –2.5 V
- Fast switching speed.
- Low gate charge (7.2 nC typical).
- High performance trench technology for extremely
- low RDS(ON).
- SuperSOT™-6 package: small footprint (72% smaller
- than standard SO-8); low profile (1mm thick)
応用
["HDD ", "Asynchronous Rectification ", "Load Switch for Portable Devices"]仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 5.97 A | Rds On - Drain-Source Resistance | 100 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 7.53 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3.2 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 11 ns |
Height | 1.1 mm | Length | 3.05 mm |
Product Type | MOSFET | Rise Time | 59 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 30 ns |
Typical Turn-On Delay Time | 27 ns | Width | 1.65 mm |
Part # Aliases | SI3443CDV-T1-BE3 SI3443CDV-GE3 | Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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