SIHP33N60E-GE3
Vishay SIHP33N60E-GE3 N-channel MOSFET Transistor, 33 A, 600 V, 3-Pin TO-220AB
在庫:4,172
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SIHP33N60E-GE3
-
パッケージ/ケース : TO-220AB
-
Brand : VISHAY
-
Components Classification : Single FETs, MOSFETs
-
日付シート : SIHP33N60E-GE3 データシート (PDF)
-
Series : SIHP33N60E
概要 SIHP33N60E-GE3
The SIHP33N60E-GE3 is a powerful field-effect transistor designed for high-performance applications. With a current rating of 33A and a voltage capability of 600V, this transistor is ideal for demanding circuits where efficiency and reliability are crucial. Its low on-resistance of 0.099ohm ensures minimal power loss and heat generation, making it a cost-effective solution for various systems
主な特長
- Improved fault tolerance and error correction
- Reduced power consumption and thermal generation
- Simplified maintenance and reduced repair time
- Advanced predictive analytics for proactive maintenance
応用
- HID lighting systems
- Battery charging units
- Motor drive applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 14 Weeks |
Samacsys Manufacturer | Vishay | Avalanche Energy Rating (Eas) | 793 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (Abs) (ID) | 33 A | Drain Current-Max (ID) | 33 A |
Drain-source On Resistance-Max | 0.099 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 278 W |
Pulsed Drain Current-Max (IDM) | 88 A | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![SI2356DS-T1-GE3](/files/uploads/product/s/c7d2bebf-8597-4e5f-f2c0-08dbc6589f1e.webp)
SI2356DS-T1-GE3
Maximum current rating of 3.2 amps
![SI7456DP-T1-E3](/files/uploads/product/s/6c40f20eebd2468a9797ac6b31133d0a.webp)
SI7456DP-T1-E3
100V MOSFET with 9.3A current rating and 5.2W power dissipation
![SI2300DS-T1-GE3](/files/uploads/product/s/9db25705-6475-4d85-c6cd-08dbc6589f1e.webp)
SI2300DS-T1-GE3
VISHAY - SI2300DS-T1-GE3 - MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3
![SI2309CDS-T1-GE3](/files/uploads/product/s/f7a537c1-8500-4367-206c-08dbb33edd15.webp)
SI2309CDS-T1-GE3
Lead-free SOT-23 MOSFETs
![SI4459ADY-T1-GE3](/files/uploads/product/s/a45074ca-3c21-4517-b0a2-08dbc6589f1e.webp)
SI4459ADY-T1-GE3
8-pin surface-mount MOSFET transistor with P-channel configuration
![SI4816BDY-T1-GE3](/files/uploads/product/s/53ad9a6895164586b4eaebceb3a5d6f0.webp)
SI4816BDY-T1-GE3
816BDY-T1-GE3":
![SI2319DS-T1-GE3](/files/uploads/product/s/e9eb24f8-02be-4ed5-a7b5-08dbc6589f1e.webp)
SI2319DS-T1-GE3
This product is a MOSFET rated for 40 volts and capable of handling currents up to 3
![SI1021R-T1-GE3](/img/package/sc75.jpg)
SI1021R-T1-GE3
Siliconix / Vishay SI1021R-T1-GE3 - P-Channel MOSFET with ESD Protection, 60V (D-S)
![SI1025X-T1-GE3](/img/package/sc70.jpg)
SI1025X-T1-GE3
SC89-6 Packaged MOSFET with -60V Vds and 20V Vgs
![SI2312CDS-T1-GE3](/img/package/sot23.jpg)
SI2312CDS-T1-GE3
VISHAY - SI2312CDS-T1-GE3 - MOSFET,N CHANNEL,20V,6A,DIODE,SOT23
![2N5582](/img/package/to3.jpg)
2N5582
TO-46-packaged NPN Bipolar Junction Transistor with a Voltage Rating of 50V and Current Rating of 0
![FF23MR12W1M1B11BOMA1](/img/package/module.jpg)
FF23MR12W1M1B11BOMA1
Transistor Module
![IRFS52N15DTRLP](/img/package/d2pak.jpg)
IRFS52N15DTRLP
With its low on-resistance and high current-handling capabilities, the IRFS52N15DTRLP MOSFET is ideal for use in demanding electronic circuits
![IXFB40N110P](/img/package/to-3.jpg)
IXFB40N110P
N-Channel Silicon Metal-oxide Semiconductor FET
![APT25GP90BDQ1G](/img/package/to247.jpg)
APT25GP90BDQ1G
RoHS 900V IGBT Transistors FG TO-247
![SI4204DY-T1-GE3](/img/package/soic8.jpg)
SI4204DY-T1-GE3
0V Vds 20V Vgs MOSFET SO-8
![MRF8S9220HR3](/img/package/sot.jpg)
MRF8S9220HR3
N-Channel Power LDMOS Transistor with 70V Rating in NI-780 Package
![BFG196](/img/package/sot223.jpg)
BFG196
Robust and reliable bipolar transistors for a wide range of industrial and automotive use
![IXFB50N80Q2](/img/product.png)
IXFB50N80Q2
MOSFET with 50 Amps and 800V
![NTMFS4C302NT1G](/files/uploads/product/s/81bb6725cb2b43e4b4db7feb73d746fe.webp)
NTMFS4C302NT1G
30V 1.15MO MOSFET NFET SO8FL