SMBT3904E6327HTSA1
NPN Bipolar Junction Transistor for General Purpose Applications, with a Maximum Voltage Rating of 40 Volts and Current Rating of 0
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.118 | $0.12 |
| 10 | $0.094 | $0.94 |
| 30 | $0.083 | $2.49 |
| 100 | $0.074 | $7.40 |
| 500 | $0.066 | $33.00 |
| 1000 | $0.063 | $63.00 |
在庫：9,060
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SMBT3904E6327HTSA1
-
パッケージ/ケース : SOT23-3
-
ブランド : Infineon Technologies
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : SMBT3904E6327HTSA1 データシート (PDF)
-
Series : SMBT3904 / MMBT3904
概要 SMBT3904E6327HTSA1
The transistor's voltage rating of 40 V, along with its high-speed switching capabilities and transition frequency of 250 MHz, makes it ideal for switching and amplification tasks in electronic devices. It meets high-quality standards for performance and reliability, and is RoHS-compliant, ensuring its environmental sustainability
主な特長
- Precise signal amplification
- High-performance switching solution
- Surface mount device
- Broad operating range ensured
- Robust and reliable performance
- Low noise output guaranteed
応用
- Communication signal conditioning
- Low-voltage switching circuits
- Microcontroller interfacing
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| functionalPacking | TAPE & REEL | addProductInfo | el.std. - - 1*3k |
| msl | 1 | halogenFree | no |
| customerInfo | STANDARD | fgr | 784 |
| productClassification | COM | productStatusInfo | discontinued |
| hfgr | T | packageName | SOT23 |
| pbFree | yes | moistureProtPack | NON DRY |
| orderingCode | Q68000A4416 | fourBlockPackageName | PG-SOT23-3-16 |
| rohsCompliant | yes | opn | SMBT3904E6327HTSA1 |
| docuNoCancellation | PD_234_23 | completelyPbFree | yes |
| sapMatnrSali | SP000011673 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SSM3J328R,LF
29.8m¦¸@4.5V,3A 1W 1V@1mA
ESM2030DV
High-power NPN silicon transistor designed for industrial applications
FGH40N60SMDF
Trans IGBT Chip N-CH 600V 80A 349W 3-Pin(3+Tab) TO-247 Tube
PSMN014-40YS,115
Nexperia PSMN014-40YS,115
PSMN015-100YLX
LFPAK56 packaged logic level MOSFET with 15mΩ on-resistance at 100V
PSMN020-100YS,115
37 mOhm Resistance
PSMN022-30PL,127
High-performance N-channel MOSFET engineered for logic-level circuits
PSMN039-100YS,115
Trans MOSFET N-CH 100V 28.1A 5-Pin(4+Tab) LFPAK T/R
PSMN1R4-40YLDX
With a maximum power dissipation of 238W and a threshold voltage of 2.2V at 1mA, this MOSFET is suitable for high-performance applications
PSMN1R9-40PLQ
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail
Q6025K6
Product Q6025K6, featuring Triacs with a voltage capacity of 600V and a current rating of 25A, along with a gate trigger current of 80-80-80mA
BSO613SPV
Functional Details: BSO613SPV facilitates reliable switching and amplification in circuits requiring P-channel MOSFETs
AOTF2210L
Power transistor for electronic circuits
IRFS4610TRLPBF
ROHS compliant under product code IRFS4610TRLPBF
BC557BTA
BC557BTA is a TO-92 PNP bipolar transistor ideal for general-purpose amplification applications
IRF3808PBF
High-performance MOSFET suitable for power applications
IRF7478PBF
MOSFET with N-channel configuration
BC846BLT1
BC846BLT1 Bipolar NPN Device
KSC3503ESTU
TRANS NPN 300V 0.1A TO126-3
IRF9362PBF
362PBF Dual P-channel MOSFET